Method of forming metal lines
US4400257A · kind A · utility
4Cited by
7References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 21, 1982 |
| Grant date | Aug 23, 1983 |
| Priority date | — |
| Expiry date | Dec 21, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28587
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming metal lines is described for semiconductor processing wherein a line mask is initially ion milled to provide a mask contour which promotes the onset of chemical etching at the base of the mask. This produces a metal line that has a tapered cross-sectional dimension wherein the base of the line is narrower than the top.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.