Plasma deposition apparatus
US4401054A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 1981 |
| Grant date | Aug 30, 1983 |
| Priority date | — |
| Expiry date | Apr 27, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/826
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma deposition apparatus having a plasma formation chamber and a specimen chamber which are arranged separately. Gaseous material and microwave power are introduced to the plasma formation chamber to generate plasma by a microwave discharge through electron cyclotron resonance. The plasma is extracted to the specimen chamber from the plasma extracting orifice. In the specimen chamber, the plasma is accelerated by the effect of divergent magnetic field to irradiate the surface of the specimen so as to deposit a thin film on the specimen substrate. A high-quality thin film is formed with a high efficiency at a low temperature. Accordingly, a thin film can be deposited on a specimen substrate having a low heat resistivity. The plasma deposition apparatus is useful for manufacturing various kinds of electronic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.