Composite MOS/bipolar power device
US4402003A · kind A · utility
40Cited by
4References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 12, 1981 |
| Grant date | Aug 30, 1983 |
| Priority date | — |
| Expiry date | Jan 12, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/406
Abstract
A merged MOS/bipolar structure for high current device applications. Using the same process sequence both an MOS device as a bipolar device are formed in a single semiconductor substrate. Integral input circuitry means couples the input terminals of the individual devices to the composite input terminal to control the relative currents carried by the individual devices as a function of the input signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.