Method and apparatus for forming and growing a single crystal of a semiconductor compound
US4404172A · kind A · utility
32Cited by
10References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 5, 1981 |
| Grant date | Sep 13, 1983 |
| Priority date | — |
| Expiry date | Jan 5, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1092
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus 10 for growing single crystal semiconductor compounds by the gradient freeze method includes means 40 for reducing radiant heat flow while enhancing axial heat flow in the region of a seed crystal 39 so as to give rise to an inverted solid-liquid interface shape 36 and a desired temperature profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.