Ion implanting method
US4404233A · kind A · utility
20Cited by
8References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 1981 |
| Grant date | Sep 13, 1983 |
| Priority date | — |
| Expiry date | Jan 13, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/265
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The ion implantation is performed in a manner to vary the angle between an ion beam and an article to be implanted with ions, whereby it can be accomplished with remarkable ease while providing the impurity distribution which is flattened in the depthwise direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.