Electrically alterable read only memory cell
US4404577A · kind A · utility
24Cited by
4References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1980 |
| Grant date | Sep 13, 1983 |
| Priority date | — |
| Expiry date | Jun 30, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/685
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A reduction in cell area and an improvement in tolerance allowed for programming and erase voltages is achieved utilizing a diffused control gate having improved capacitive coupling to the floating gate through a thin oxide grown on single crystal silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.