Method of applying a resist pattern on a substrate, and resist material mixture
US4405708A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 1982 |
| Grant date | Sep 20, 1983 |
| Priority date | — |
| Expiry date | Mar 8, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/108
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of applying a resist pattern on a substrate and resist material mixture. Resist materials which are applied in accordance with a specific resist pattern are employed in the production of integrated circuits. It has been found that the addition of a certain type of negative-working resist material, namely polystyrene and polystyrene derivatives, to positive-working resist materials results in a resist material mixture having an increased resistance to plasma etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.