Photoelectric conversion device and method of producing the same
US4405879A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 1981 |
| Grant date | Sep 20, 1983 |
| Priority date | — |
| Expiry date | Mar 23, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/233
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
There is disclosed a photoelectric conversion device comprising a transparent substrate; a transparent conductive film formed on said substrate; a photoconductive layer formed of hydrogenated amorphous silicon as an indispensable component and deposited on said transparent conductive film; and a chalcogen glass film formed on said photoconductive layer, wherein said chalcogen glass film includes at least a chalcogen glass layer formed in an atmosphere of inert gas kept at 1.5.times.10.sup.-2 to 1.5.times.10.sup.-1 Torr. As chalcogen glass is preferably used Sb.sub.2 S.sub.3, As.sub.2 S.sub.3, As.sub.2 Se.sub.3 or Sb.sub.2 Se.sub.3. The chalcogen glass film may be a composite film consisting of plural component layers. This invention is very useful to reduce dark current in an image pickup tube and to prevent image inversion in the image pickup tube.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.