FET Circuit for converting TTL to FET logic levels
US4406956A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 1980 |
| Grant date | Sep 27, 1983 |
| Priority date | — |
| Expiry date | Aug 11, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/018507
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
This invention relates to a field effect transistor level converter for converting bipolar transistor logic levels to field effect transistor logic levels. First and second field effect transistors have their source and gate electrodes connected in common. The bipolar input signal is received at the common source connection while the gate electrodes receive a fixed reference potential that is equal to the threshold voltage VT plus the lowest possible high binary level of the bipolar input logic. The drain electrode of the first field effect transistor is connected to the output terminal of the level converter and the source electrode of a source follower transistor. The drain electrode of the second transistor is connected to a load device and to the gate of the source follower transistor which has its drain electrode connected to VH. This arrangement produces at the first output terminal a potential swing of approximately 0 to 7 volts in response to an input signal in the range of 0.8 to 2.0 volts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.