Hybrid method of making an amorphous silicon P-I-N semiconductor device

US4407710A · kind A · utility

Assignee

• Exxon Research and Engineering Company · US

Inventors

• Theodore D. Moustakas · Dover, US
• Don L. Morel · Craydon Court, US
• Benjamin Abeles · Princeton, US

Key dates

• Filing date: Oct 15, 1981
• Grant date: Oct 4, 1983
• Expiry date: Oct 15, 2001

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.