Patent · US Expired

Method for producing films of sintered polycrystalline silicon

US4407858A · kind A · utility

13Cited by

3References

5Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Leopold Hanke · Beyharting, DE
Hans-Martin Hellebrand · Hersbruck, DE
Helmut Schmelz · Prien am Chiemsee, DE

Key dates

Filing date	Dec 29, 1981
Grant date	Oct 4, 1983
Priority date	—
Expiry date	Dec 29, 2001

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B29/06
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A low porosity sintered polycrystalline silicon film is produced by grinding initial silicon material in a non-oxygen-containing liquid, such as decahydronaphthalene, to an average grain size corresponding to a specific surface of at least 50 m.sup.2 /g; thickening the so-attained grinding mass with a non-oxygen-containing material, such as polyisobutylene and/or polyethylene in a suitable solvent, so as to attain a viscosity in the resultant slip suitable for drawing a film from such slip, and drawing a film from such slip, optionally dividing the film into desired sized pieces, and sintering the resultant film or pieces.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.