GaN Electroluminescent semiconductor device and method for making the same
US4408217A · kind A · utility
31Cited by
1References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 1980 |
| Grant date | Oct 4, 1983 |
| Priority date | — |
| Expiry date | Dec 4, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/913
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electroluminescent semiconductor device comprising bodies of conductive and resistive crystalline gallium nitride (GaN) which are successively epitaxially deposited on a surface of a heat-treated sapphire substrate, and a body of insulative crystalline gallium nitride epitaxially deposited on the resistive body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.