Photosensitive member
US4409311A · kind A · utility
16Cited by
5References
5Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 8, 1982 |
| Grant date | Oct 11, 1983 |
| Priority date | — |
| Expiry date | Mar 8, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A hydrogen containing amorphous silicon photoconductive layer exhibits infrared absorption peaks between wavenumber of 2000 cm.sup.-1 where Si-H bonds are predominant and wavenumber of 2090 cm.sup.-1 where Si-H.sub.2 bonds are predominant and has an absorption coefficient ratio of the peaks of 2090 cm.sup.-1 to 2000 cm.sup.-1 of about 0.2 to 1.7. Preferably, the photoconductive layer is formed by a glow discharge decomposition and may contain small amount of oxygen and 10 to 20,000 ppm of Group IIIA impurity of the Periodic Table.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.