Method for manufacture of silicon carbide
US4410502A · kind A · utility
9Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 1981 |
| Grant date | Oct 18, 1983 |
| Priority date | — |
| Expiry date | Nov 13, 2001 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/80
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Silicon carbide of improved quality is obtained by using a liquid silicic acid or modified liquid silicic acid as a silicic substance and carbon in a powdered form, a precursor of carbon in a powdered form, or a precursor of carbon in the form of a solution as a carbonaceous substance, and thermally treating these raw materials in a non-oxidative atmosphere. The silicon carbide thus produced is finely divided and in high-purity and suitable for use as raw material for the production of high-strength sintered articles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.