EBS Device with cold-cathode
US4410832A · kind A · utility
7Cited by
8References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1983 |
| Grant date | Oct 18, 1983 |
| Priority date | — |
| Expiry date | Jan 27, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J21/14
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Apparatus and method are described for fabricating a long life cold cathode lectron beam semiconductor device (EBS). Fabrication is given of a vacuum tube structure capable of sustaining sufficiently high vacuum over extended time to prevent poisoning of the cold cathode and steps are give for growth of a plural tip cold cathode structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.