Semiconductor laser
US4410994A · kind A · utility
1Cited by
1References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1981 |
| Grant date | Oct 18, 1983 |
| Priority date | — |
| Expiry date | Sep 16, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/323
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser having a multi-layer film which is inclusive of an active layer and formed on an InP substrate, in which at least one layer adjacent to the active layer is formed of a material which is a composition having a larger band gap than InP and whose component ratio is so selected as to match with the lattice constant of InP, thereby to ensure that minority carriers injected into the active layer efficiently contribute to laser operation. The material has a composition including at least three elements in addition to InP.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.