SPER Device for material working
US4411733A · kind A · utility
21Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 1982 |
| Grant date | Oct 25, 1983 |
| Priority date | — |
| Expiry date | Jun 18, 2002 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/221
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A segmented plasma excitation and recombination (SPER) device is employed in a deposition scheme in which the plasma generated in the gap between adjacent electrodes is formed into a beam of ions/atoms by flowing a background gas through the gap. The beam strikes a workpiece and deposits a layer of the vaporized electrode material thereon. Also described are techniques where the ions react with workpiece or the background gas to form a layer, as well as where the ions bombard the workpiece to etch away a layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.