Patent · US Expired

Integrated circuit photomask

US4411972A · kind A · utility

24Cited by
15References
25Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 30, 1981
Grant dateOct 25, 1983
Priority date
Expiry dateDec 30, 2001

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/24992
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A photomask formed of a transparent dielectric substrate, such as glass and quartz based substrates, having a conductive surface adjacent region, which is patterned with sequential overcoatings of a composite chrome oxide layer and a chrome film. The mask comprises a combination of varied reflectivities to provide proper densities for the opaque areas of the mask.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.