Integrated opto-electronic relay using a semiconductor with persistent photoconductivity and a matrix of such relays
US4412235A · kind A · utility
Inventor
Key dates
| Filing date | Feb 12, 1981 |
| Grant date | Oct 25, 1983 |
| Priority date | — |
| Expiry date | Feb 12, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F55/207
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
Integrated opto-electronic relay of the type comprising a first semiconductor layer material having a persistent photoconductivity which is deposited on a major surface of an insulating substrate and is provided with two electrical contacts, a second semiconductor layer deposited on the opposite major surface of the insulating substrate provided with two electrical contacts and functioning as both an optical radiation source when forward biased and as a thermal radiation source when reversed biased, the radiation directed onto the first semiconductor layer to induce persistent photoconductivity in the first layer when optically exposed and to eliminate the conductivity when thermally exposed, and an enclosure enabling low temperature control of the first layer having persistent photoconductivity. The invention also relates to a switching matrix incorporating a plurality of these relays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.