Semiconductor devices having fuses
US4413272A · kind A · utility
62Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 3, 1980 |
| Grant date | Nov 1, 1983 |
| Priority date | — |
| Expiry date | Sep 3, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device has fuses coated with a protecting layer. The protecting layer is selectively etched to open windows so as to expose narrow center portions of the fuses. After the opening of the center windows, the fusing operation of the fuses is carried out to open a gap in the center window portion of the fuse material. In a preferred embodiment, another protective layer is then added to fill the gaps in the blown fuses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.