Method of depositing a high-emissivity layer
US4414085A · kind A · utility
12Cited by
2References
8Claims
0Family size
Inventors
Key dates
| Filing date | Oct 8, 1981 |
| Grant date | Nov 8, 1983 |
| Priority date | — |
| Expiry date | Oct 8, 2001 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/26
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of depositing a high-emissivity layer on a substrate comprising RF sputter deposition of a carbide-containing target in an atmosphere of a hydrocarbon gas and a noble gas. As the carbide is deposited on the substrate the hydrocarbon gas decomposes to hydrogen and carbon. The carbon deposits on the target and substrate causing a carbide/carbon composition gradient to form on the substrate. At a sufficiently high partial pressure of hydrocarbon gas, a film of high-emissivity pure carbon will eventually form over the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.