Hetero-junction light-emitting diode
US4414558A · kind A · utility
11Cited by
6References
7Claims
0Family size
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Key dates
| Filing date | Feb 9, 1981 |
| Grant date | Nov 8, 1983 |
| Priority date | — |
| Expiry date | Feb 9, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
Abstract
The emission efficiency of a hetero-junction light-emitting diode is improved by raising the carrier concentration in the radiative region, and by increasing the thickness of the radiative region. On p.sup.+ type GaAs substrate, a p type Ga.sub.1-x Al.sub.x As (0.30<.times.<0.37) layer and an n type Ga.sub.1-y Al.sub.y As (0.40<y<0.70) layer are grown. The emission efficiency are optimized when EQU 4.5.times.10.sup.17 cm.sup.-3 <p<2.5.times.10.sup.18 cm.sup.-3 EQU 2.times.10.sup.17 cm.sup.-3 <n<1.times.10.sup.18 cm.sup.-3 and the thickness of the p type layer is at least about 5 .mu.m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.