Patent · US Expired

Photomask

US4415262A · kind A · utility

16Cited by
2References
24Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 18, 1982
Grant dateNov 15, 1983
Priority date
Expiry dateJan 18, 2002

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F1/50
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A photomask is disclosed which is suitable for use in the one-mask method capable of forming a plurality of patterns with one exposure, and in which an opaque pattern having a predetermined form and a semi-transparent pattern having another predetermined form are formed on a transparent substrate, and the semi-transparent pattern is formed of an opaque film having a large number of fine through holes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.