Method of making sensitive positive electron beam resists
US4415653A · kind A · utility
6Cited by
17References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1982 |
| Grant date | Nov 15, 1983 |
| Priority date | — |
| Expiry date | Dec 7, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/111
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The method of making highly sensitive positive electron beam resists comprised of copolymers of methacrylic acid (MAA) and methacrylonitrile (MCN) is disclosed utilizing a prebaking step in which the copolymer resist in film form on the substrate is prebaked at a temperature below the decomposition temperature to improve the sensitivity of the resist. The positive electron resists produced in accordance with the present invention exhibit a high sensitivity, and high plasma etch resistance which makes them desirable for dry etching techniques in addition to other masking techniques which enable submicron resolution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.