Patent · US Expired

Transferred electron devices

US4417261A · kind A · utility

3Cited by
5References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 6, 1977
Grant dateNov 22, 1983
Priority date
Expiry dateSep 6, 1997

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N80/107

Abstract

A transferred electron device includes a novel cathode giving improvement in the dc to microwave conversion efficiency over a wide temperature range. The cathode comprises a narrow n.sup.+ semiconductor zone next to the device active region or layer and, next to the n.sup.+ zone, a high field contact which includes a region of semiconductor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.