Green light emitting device

US4417262A · kind A · utility

Assignee

• Tokyo Shibaura Denki Kabushiki Kaisha · JP

Inventors

• Masami Iwamoto · Kawasaki, JP
• Makoto Tashiro · Toyota, JP
• Tatsuro Beppu · Tokyo, JP
• Akinobu Kasami · Yokohama, JP

Key dates

• Filing date: Apr 6, 1981
• Grant date: Nov 22, 1983
• Expiry date: Apr 6, 2001

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8242

Abstract

A green light emitting device, includes an n-type gallium phosphide (GaP) substrate, an n-type GaP layer and a p-type GaP layer laminated on the n-type GaP substrate. The net donor concentration in the n-type GaP layer decreases abruptly in steps from the GaP substrate side to the p-type GaP layer side. Nitrogen is contained in only the n-type GaP layer portion closest to the p-type GaP layer.