Method for forming a low temperature binary glass
US4417914A · kind A · utility
15Cited by
13References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 26, 1982 |
| Grant date | Nov 29, 1983 |
| Priority date | — |
| Expiry date | Mar 26, 2002 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C4/16
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The method of the invention provides a thin film deposit of a binary glass for use in integrated circuits which binary glass has a softening or flow point far below temperatures at which glasses normally used in connection with integrated circuits flow. After the binary glass has been deposited (on a semiconductor substrate), it is heated and reflowed. Preferably the glass comprises a mixture of germanium dioxide and silicon dioxide wherein the germanium dioxide is no greater than approximately 50 mole percent of the mixture. Phosphorus is added to the glass film for passivation of the underlying devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.