Process for preparing layers of Hg.sub.1-x Cd.sub.x Te
US4418096A · kind A · utility
10Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 19, 1981 |
| Grant date | Nov 29, 1983 |
| Priority date | — |
| Expiry date | Nov 19, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F71/1253
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A process for preparing layers with a superficial composition of Hg.sub.1-x Cd.sub.x Te comprising the steps of producing a wafer by forming a layer of superficial composition Hg.sub.1-y Cd.sub.y Te on a substrate of CdTe, y being less than the desired value x, and subjecting this wafer to a thermal interdiffusion treatment at a temperature of between about 350.degree. and about 750.degree. C., under such conditions that the layer of Hg.sub.1-y Cd.sub.y Te cannot decompose.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.