Large-surface fast photodetector sensitive in the 0.8-1.1 .mu.m range
US4420684A · kind A · utility
6Cited by
5References
1Claims
0Family size
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Key dates
| Filing date | Jun 9, 1981 |
| Grant date | Dec 13, 1983 |
| Priority date | — |
| Expiry date | Jun 9, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/221
Abstract
The photodetector comprises a silicon substrate with high sensitivity, a diffusion layer defining a PN junction, and a CdTe layer, as filter, placed on the face close to the PN junction, for stopping radiations of wave lengths shorter than 0.8 .mu.m. The photodetector is suitable for detecting radiations of AsGa diodes used in optical telecommunication systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.