Plasma enhanced deposition of semiconductors
US4421592A · kind A · utility
65Cited by
18References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 1981 |
| Grant date | Dec 20, 1983 |
| Priority date | — |
| Expiry date | May 22, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/915
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Semiconductor thin films are produced using plasma assisted chemical vapor deposition on alkali halide single crystal substrates. Deposition is formed at relatively low temperatures so that sublimation of the substrate is not a problem. The invention process permits at high rate deposition of high quality semiconductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.