Thin film capacitor with a dual bottom electrode structure
US4423087A · kind A · utility
33Cited by
5References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1981 |
| Grant date | Dec 27, 1983 |
| Priority date | — |
| Expiry date | Dec 28, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12875
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin film capacitor having a dual bottom electrode is provided. The bottom electrode comprises a first layer of metal and a second layer of platinum, said metal of the first layer being of the nature of forming a stable intermetallic phase with the platinum during heat treatment. The metal of the first layer is typically selected from the group consisting of Hf, Zr, and Ta. The thin film capacitor is suitable for the decoupling capacitor of VLSI.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.