Thin-film electrothermal device
US4423401A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 21, 1982 |
| Grant date | Dec 27, 1983 |
| Priority date | — |
| Expiry date | Jul 21, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01H2061/006
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Thin film multilayer technology is used to build microminiature electromechanical switches having low resistance metal-to-metal contacts and distinct on-off characteristics. The switches, which are electrothermally actuated, are fabricated on conventional hybrid circuit substrates using processes compatible with those employed to produce thin-film electrical circuits. In a preferred form, such a switch includes a cantilever actuating member comprising a resiliently bendable strip of a hard insulating material (e.g., silicon nitride) to which a metal (e.g., nickel) heating element is bonded. The free end of the cantilever member carries a metal contact, which is moved into (or out of) engagement with an underlying fixed contact by controlled bending of the member via electrical current applied to the heating element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.