High-breakdown-voltage resistance element for integrated circuit with a plurality of multilayer, overlapping electrodes
US4423433A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 1980 |
| Grant date | Dec 27, 1983 |
| Priority date | — |
| Expiry date | Jun 3, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/43
Abstract
A high-breakdown-voltage resistance element comprises a semiconductor body, an impurity layer disposed in a surface region of the semiconductor body to provide a resistor body, a first electrode connected to one end of the resistor body through a contact hole in a first insulating film formed on the surface of the semiconductor body, and a second electrode connected to the other end of the resistor body through another contact hole in the insulating film. A second insulating film is formed on the first and second electrodes, and a third electrode is connected to the first electrode through a contact hole in the second insulating film, so that the entire surface of the resistor body and adjacent areas are covered with the first, second and third electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.