Thin film transistor
US4425572A · kind A · utility
58Cited by
4References
4Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | May 7, 1981 |
| Grant date | Jan 10, 1984 |
| Priority date | — |
| Expiry date | May 7, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/675
Abstract
A thin film transistor comprising a substrate having source and drain electrodes formed thereon, a semiconductor layer making contact in part with the source electrode and in part with the drain electrode, a gate electrode, and a gate insulating layer positioned between the semiconductor layer and the gate electrode is disclosed. A portion of the drain electrode is held in overlapping relation to a portion of the gate electrode while a portion of the source electrode is spaced apart from said gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.