Device for simulating an instantaneous temperature-rise of a semiconductor component in order to protect same
US4425624A · kind A · utility
13Cited by
4References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 10, 1981 |
| Grant date | Jan 10, 1984 |
| Priority date | — |
| Expiry date | Jun 10, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02H6/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In order to simulate an instantaneous temperature-rise of a thyristor through which flows a current (I), this device takes the mean value (VM) of that current and squares the effective value (EC) thereof. An image of the dissipated power obtained at the output of an adder (S) is applied to devices (K.tau.ra, K.tau.br, K.tau.jb) for simulating radiator-environment, housing-radiator and junction-housing thermal time-constants, respectively. An adder (S.sub.1) provides the image i (.DELTA..theta.) of the temperature-rise.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.