Volatile metal oxide suppression in molecular beam epitaxy systems
US4426237A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 13, 1981 |
| Grant date | Jan 17, 1984 |
| Priority date | — |
| Expiry date | Oct 13, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/961
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
When growing GaAs by molecular beam epitaxy (MBE), a typical related reaction acts to affix Ga.sub.2 O.sub.3 to the growth surface and hence incorporates such oxide contaminants in the epitaxial layer as it is grown. Such contaminants may yield crystals of poor electrical and optical properties. When Al is added to the Ga source crucible, the Ga.sub.2 O flux is reduced substantially thereby suppressing the formation of such oxide contaminants and remove a serious constraint to MBE growth. When doping GaAs with Mg to form a p-type GaAs layer, unity Mg doping efficiency is achieved by including 0.1% Al in the Ga effusion cell. Such an inclusion of Al improves the Mg doping efficiency by suppressing the formation of MgO, and allows MBE growth at lower substrate temperatures and at higher growth rates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.