Method for forming micropattern
US4426247A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 1983 |
| Grant date | Jan 17, 1984 |
| Priority date | — |
| Expiry date | Apr 6, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/95
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming a micropattern, comprises the steps of forming an organic polymeric material layer on a substrate, forming a silicone layer on the organic polymeric material layer, selectively irradiating a surface of the silicone layer with a high-energy beam, exposing the surface of the silicone layer to a radical addition polymerizable monomer gas so as to form a graft polymer film on an irradiated portion of the surface of the silicone layer, performing reactive ion etching using the graft polymer film as a mask so as to form a silicone pattern, and performing reactive ion etching using the silicone pattern as a mask so as to form an organic polymeric material pattern. The method allows formation of a resist pattern with a high precision and a high aspect ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.