Process for producing thin-film transistors on an insulating substrate
US4426407A · kind A · utility
Inventors
Key dates
| Filing date | Dec 20, 1982 |
| Grant date | Jan 17, 1984 |
| Priority date | — |
| Expiry date | Dec 20, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6746
Abstract
Process for the production of thin-film transistors on an insulating substrate, wherein it comprises the following stages: PA0 1. deposition on an insulating substrate of a coating of a metal able to form a silicide in contact with a silicon, PA0 2. photoengraving of the first metal coating to define the sources, drains and channels for the future transistors and various connections between the transistors, PA0 3. deposition of a silicon coating by reactive gaseous phase plasma, which leads to the appearance of a silicide coating in contact with the metal of the photoengraved coating, PA0 4. deposition of a silica coating by reactive gaseous phase plasma, PA0 5. deposition of a conductive coating by reactive gaseous phase plasma, PA0 6. photoengraving of the conductive coating-silica coating-silicon coating system, without etching the silicide covering the photoengraved metal coating. Application to the production of large-area electronic components used e.g. in the production of flat display screens and the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.