Integrated optical grating device by thermal SiO.sub.2 growth on Si
US4426440A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 18, 1982 |
| Grant date | Jan 17, 1984 |
| Priority date | — |
| Expiry date | Nov 18, 2002 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/124
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a method of producing an integrated optical grating device having extremely low scattering losses. The method employs a highly polished and prepared silicon chip for receiving a grating pattern or any other surface relief feature on the silicon wafer surface for its predetermined use. The pattern after it is generated is etched to a predetermined period, for example, when the pattern is for a waveguide device. An SiO.sub.2 growth layer is thermally grown to a thickness of about 4 to 8 micrometers to replicate the generated pattern in the SiO.sub.2 growth layer. This method yields a waveguide or similar optical grating device having undulations of extremely low values as determined by SEM photographs of this device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.