GaAs FETs Having long-term stability

US4426656A · kind A · utility

Assignee

• Bell Telephone Laboratories, Inc. · US

Inventors

• James DiLorenzo · Naples, US
• James Cheng-Min Hwang · Bethlehem, US
• William C. Niehaus · New Providence, US
• Wolfgang Schlosser · Berkeley Heights, US
• Stuart H. Wemple · Madison, US

Key dates

• Filing date: Jan 29, 1981
• Grant date: Jan 17, 1984
• Expiry date: Jan 29, 2001

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3025
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

GaAs FETs exhibit excellent long-term stability if they have a drain ledge, a drain contact with reduced dendrite size, and a silicon nitride passivation layer. Accelerated aging tests at device case temperatures of 250 degrees C. indicate essentially no device failures after 200 hours of observation and a median failure time of approximately 500 hours.