Semiconductor laser device
US4426702A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 1981 |
| Grant date | Jan 17, 1984 |
| Priority date | — |
| Expiry date | Jul 15, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This invention consists in improvements in a buried-heterostructure laser with buried optical guide, and facilitates the oscillation of the laser in the fundamental mode thereof and also enhances the available percentage of production of the laser. An active layer and an optical guide layer are sandwiched between two cladding layers, to form an optical confinement region. The width of the semiconductor material assembly varies in the direction of the stacked layers, and the narrowest part thereof is located on a side opposite to the optical guide layer with reference to the position of the active layer. The side surface of said semiconductor material assembly parallel to the traveling direction of laser radiation is buried by a burying layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.