Process for fabrication of ohmic contacts in compound semiconductor devices
US4426765A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 1981 |
| Grant date | Jan 24, 1984 |
| Priority date | — |
| Expiry date | Aug 24, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28581
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process and related product in which ohmic contacts are formed in semiconductor devices employing compound substrates such as gallium arsenide. In the disclosed embodiment, a germanium layer (18) is deposited in those areas (14) in which ohmic contact is required and is subsequently diffused into a layer 20 of the substrate during a conventional annealing step required to relieve damage caused to the substrate during a prior conventional ion implantation step. As a result of the diffusion of the germanium, good ohmic contact can be made by deposition of a conductive metal 26, such as gold. Thus, a common metalization step can be employed to form both the ohmic contact regions and rectifying contact regions used as gates in field effect transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.