A method for sensing deposition of a thin film layer of a material
US4427711A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 13, 1982 |
| Grant date | Jan 24, 1984 |
| Priority date | — |
| Expiry date | Sep 13, 2002 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/042
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Apparatus for sensing deposition of a thin film layer of a material from a source onto a substrate having a carriage assembly including a predetermined number of apertures for selectively passing predetermined portions of a material from the source along each of a plurality of predetermined paths located in the proximity of the substrate under conditions correlated to that under which the material is deposited through a deposition path onto the substrate, inhibiting elements positioned relative to the carriage assembly for selectively inhibiting passage of predetermined portions of the material through a selected number of the predetermined number of the apertures, and a monitor for monitoring a selected parameter of the thin film material which is passed through other than the selected number of apertures of the carriage assembly wherein the monitor includes a plurality of detectors one of each of which is positioned along one of the plurality of predetermined paths and being adapted to sense a predetermined portion of a thin film material being passed along its associated predetermined path and for producing electrical signals derived from the selected parameter representating at…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.