Vacuum metallizing a dielectric substrate with indium and products thereof
US4431711A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 8, 1981 |
| Grant date | Feb 14, 1984 |
| Priority date | — |
| Expiry date | Oct 8, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2495
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A surprisingly corrosion and abuse resistant plastic object vacuum-metallized with a corrosion prone metal, namely indium, on a dielectric substrate consists of minute specular electrically-discrete "islands" of the indium topcoated with a clear resinous layer which encapsulates and insulates the islands, one from another. The indium islands are less than one thousand angstroms thick and have an average diameter of less than three thousand angstroms. This island structure is secured by stopping the growth of the metal as it is deposited between the nucleation stage and the stage of channelization or formation of an electrically conductive film. The island structure permits the dielectric resinous topcoat to penetrate in, about and under the metal islands encapsulating and securely bonding them to the substrate. The vacuum deposited indium gives a bright sheeny appearance which, when properly topcoated, very closely duplicates the appearance of electrodeposited chrome. A preferred application of this invention is the manufacture of exterior automobile trim components the base structure of which is a flexible elastomer such as a thermoplastic urethane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.