Laser induced flow Ge-O based materials
US4431900A · kind A · utility
6Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 15, 1982 |
| Grant date | Feb 14, 1984 |
| Priority date | — |
| Expiry date | Jan 15, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device, laser energy is used to selectively heat various SiO.sub.2 and/or GeO.sub.2 based materials to elevated temperatures while maintaining the active device region and electrical interconnects at relatively low temperatures, to for example, induce densification and/or flow of the SiO.sub.2 and/or GeO.sub.2 based material to round off sharp edges and stops, without damaging or affecting the active region and electrical interconnects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.