Method of making high dielectric constant insulators and capacitors using same
US4432035A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 1982 |
| Grant date | Feb 14, 1984 |
| Priority date | — |
| Expiry date | Jun 11, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G2/12
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An improved method of fabricating a stable high dielectric constant and low leakage dielectric material includes oxidizing at a temperature of about 400.degree. C. or higher a layer of a transition metal-silicon alloy having 40% to 90% transition metal by atomic weight to produce a silicate or homogeneous mixture. The mixture includes an oxide of the transition metal and silicon dioxide. The alloy may be deposited on, e.g., a semiconductor or an electrically conductive layer that is oxidation resistant, and the thickness of the mixture or oxidized alloy should be within the range of 5 to 50 nanometers. By depositing an electrically conductive layer on the homogeneous mixture, a capacitor having a high dielectric, low leakage dielectric medium is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.