High speed PROM device
US4432070A · kind A · utility
6Cited by
3References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 30, 1981 |
| Grant date | Feb 14, 1984 |
| Priority date | — |
| Expiry date | Sep 30, 2001 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device (100) utilizing a programming transistor (54) capable of switching high programming currents, and a read transistor (53) capable of sensing the state of the cell (i.e. programmed or unprogrammed). The programming transistor, utilized only when programming the cell, being rather large, is rather slow. The read transistor, utilized only when reading the cell, is constructed to be as small as possible, thereby achieving a substantially increased reading speed over prior art PROM devices which utilize a single transistor per memory cell for both programming and reading.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.