Process for in-situ formation of niobium-insulator-niobium Josephson tunnel junction devices

US4432134A · kind A · utility

Assignee

• Rockwell International Corporation · US

Inventors

• Addison B. Jones · La Mirada, US
• Francis M. Erdmann · Maple Grove, US

Key dates

• Filing date: May 10, 1982
• Grant date: Feb 21, 1984
• Expiry date: May 10, 2002

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/49014

Abstract

A method of forming a superconductor-barrier-superconductor junction device by the steps of depositing a first superconductive layer on a substrate, forming a barrier layer on the first superconductive layer and depositing a second superconductive layer on the barrier layer. A layer of photoresist is then deposited over the second superconductive layer and patterned together with the second superconductive layer to form a mesa structure. A dielectric layer is deposited over the mesa structure, and the photoresist layer portion is dissolved thereby lifting off the dielectric portion overlying said second superconductive layer portion.