Patent · US Expired

Moisture sensor and method of manufacturing the same

US4433319A · kind A · utility

6Cited by
1References
36Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 9, 1981
Grant dateFeb 21, 1984
Priority date
Expiry dateJun 9, 2001

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N27/225
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A moisture sensor including a thin layer of tantalum oxide applied to a moisture insensitive substrate and at least two electrodes placed on the tantalum oxide layer spaced apart from each other wherein the tantalum oxide layer comprises the oxide of a highly resistive low density tantalum where the tantalum in the layer applied to the substrate has a density of less than 15 g/cm.sup.3.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.