Moisture sensor and method of manufacturing the same
US4433319A · kind A · utility
6Cited by
1References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 1981 |
| Grant date | Feb 21, 1984 |
| Priority date | — |
| Expiry date | Jun 9, 2001 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/225
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A moisture sensor including a thin layer of tantalum oxide applied to a moisture insensitive substrate and at least two electrodes placed on the tantalum oxide layer spaced apart from each other wherein the tantalum oxide layer comprises the oxide of a highly resistive low density tantalum where the tantalum in the layer applied to the substrate has a density of less than 15 g/cm.sup.3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.