Method for making semiconductor device having improved thermal stress characteristics
US4433468A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 20, 1981 |
| Grant date | Feb 28, 1984 |
| Priority date | — |
| Expiry date | Mar 20, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a first semiconductor layer with a main surface and a second semiconductor layer forming a PN junction with the first semiconductor layer, the PN junction reaching the main surface. An insulating layer is formed on the main surface and has at least one window which at least exposes a part of the second semiconductor layer. A third semiconductor layer, which is the same conductivity type as the second semiconductor layer, is formed on a portion exposed in the window. A metal-semiconductor alloy layer is electrically connected to the third semiconductor layer. According to another aspect of the invention, a method of manufacturing the smiconductor device uses the steps of providing a first semiconductor layer with a main surface, making a second semiconductor layer to form a PN junction reaching the main surface of the first semiconductor layer, and forming an insulating layer with at least one window exposing at least a part of the second semiconductor layer on the main surface. A third semiconductor layer is formed in the exposed window by introducing impurities of the same conductivity type as that used in the second semiconductor layer, through the wind…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.